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ChinaFQU5N40TU
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQU5N40TU
BESCHREIBUNG
POWER FIELD-EFFECT TRANSISTOR, 3
DETAILIERTE BESCHREIBUNG
N-Channel 400 V 3.4A (Tc) 2.5W (Ta), 45W (Tc) Through Hole IPAK
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
535
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
3.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.6Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
460 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 45W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
IPAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
FAIFSCFQU5N40TU
2156-FQU5N40TU
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQU5N40TU
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 535
Einzelpreis: $0.56
Verpackung: Bulk
MinMultiplikator: 535
Verpackung: Bulk
MinMultiplikator: 535
Stellvertreter
-