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TEILNUMMER DES HERSTELLERS
2SD1803S-E
BESCHREIBUNG
NPN EPITAXIAL PLANAR SILICON TRA
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 50 V 5 A 180MHz 1 W Through Hole IPAK/TP
HERSTELLER
Sanyo
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
461
Lagerbestände
Technische Daten
Mfr
Sanyo
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
5 A
Voltage - Collector Emitter Breakdown (Max)
50 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 150mA, 3A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA, 2V
Power - Max
1 W
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
IPAK/TP
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-2SD1803S-E
ONSONS2SD1803S-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo 2SD1803S-E
Dokumente und Medien
Datasheets
1(2SD1803S-TL-E Datasheet)
Menge Preis
QUANTITÄT: 461
Einzelpreis: $0.65
Verpackung: Bulk
MinMultiplikator: 461
Verpackung: Bulk
MinMultiplikator: 461
Stellvertreter
-