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China2SC3600D
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC3600D
BESCHREIBUNG
NPN SILICON TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 200 V 100 mA 400MHz 1.2 W Through Hole TO-126
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
314
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
200 V
Vce Saturation (Max) @ Ib, Ic
800mV @ 3mA, 30mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 10mA, 10V
Power - Max
1.2 W
Frequency - Transition
400MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Supplier Device Package
TO-126
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
ONSSNY2SC3600D
2156-2SC3600D
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC3600D
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 314
Einzelpreis: $0.96
Verpackung: Bulk
MinMultiplikator: 314
Verpackung: Bulk
MinMultiplikator: 314
Stellvertreter
-