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ChinaBCP56-16/DG/B2115
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TEILNUMMER DES HERSTELLERS
BCP56-16/DG/B2115
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 80 V 1 A 180MHz 600 mW Surface Mount SC-73
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,567
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
BCP56
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
80 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA, 2V
Power - Max
600 mW
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
SC-73
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-BCP56-16/DG/B2115
NEXNEXBCP56-16/DG/B2115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BCP56-16/DG/B2115
Dokumente und Medien
Datasheets
1(BC56PA115 Datasheet)
HTML Datasheet
1(BC56PA115 Datasheet)
Menge Preis
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Stellvertreter
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