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ChinaIPP230N06L3GXKSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPP230N06L3GXKSA1
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 30A 36W Through Hole PG-TO220-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
831
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
30A
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
23mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 11µA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
36W
Operating Temperature
-55°C ~ 175°C
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFIPP230N06L3GXKSA1
2156-IPP230N06L3GXKSA1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPP230N06L3GXKSA1
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 831
Einzelpreis: $0.36
Verpackung: Bulk
MinMultiplikator: 831
Verpackung: Bulk
MinMultiplikator: 831
Stellvertreter
-