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ChinaBFP182WE6327
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TEILNUMMER DES HERSTELLERS
BFP182WE6327
BESCHREIBUNG
RF TRANSISTOR, L BAND, NPN
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 12V 35mA 8GHz 250mW Surface Mount PG-SOT343-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,463
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
8GHz
Noise Figure (dB Typ @ f)
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Gain
22dB
Power - Max
250mW
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 8V
Current - Collector (Ic) (Max)
35mA
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
SC-82A, SOT-343
Supplier Device Package
PG-SOT343-4
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-BFP182WE6327
IFEINFBFP182WE6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Infineon Technologies BFP182WE6327
Dokumente und Medien
Datasheets
1(BFP182W)
HTML Datasheet
1(BFP182W)
Menge Preis
QUANTITÄT: 3463
Einzelpreis: $0.09
Verpackung: Bulk
MinMultiplikator: 3463
Verpackung: Bulk
MinMultiplikator: 3463
Stellvertreter
-