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ChinaFQPF13N10L
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQPF13N10L
BESCHREIBUNG
MOSFET N-CH 100V 8.7A TO220F
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 8.7A (Tc) 30W (Tc) Through Hole TO-220F-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FQPF13N10L Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
180mOhm @ 4.35A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
520 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220F-3
Package / Case
TO-220-3 Full Pack
Base Product Number
FQPF1
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FQPF13N10L
Dokumente und Medien
Datasheets
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Environmental Information
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HTML Datasheet
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EDA Models
1(FQPF13N10L Models)
Menge Preis
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Stellvertreter
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