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ChinaNTD4857NA-1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTD4857NA-1G
BESCHREIBUNG
MOSFET N-CH 25V 12A/78A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 12A (Ta), 78A (Tc) Through Hole I-PAK
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs
5.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1960 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
NTD48
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-NTD4857NA-1G-ON
ONSONSNTD4857NA-1G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTD4857NA-1G
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 07/Jul/2010)
Menge Preis
-
Stellvertreter
-