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ChinaIRFR9110
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFR9110
BESCHREIBUNG
MOSFET P-CH 100V 3.1A DPAK
DETAILIERTE BESCHREIBUNG
P-Channel 100 V 3.1A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount TO-252AA (DPAK)
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
3.1A (Tc)
Rds On (Max) @ Id, Vgs
1.2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 25W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252AA (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-IRFR9110
HARHARIRFR9110
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRFR9110
Dokumente und Medien
Datasheets
1(RFD3055LESM9A)
Menge Preis
QUANTITÄT: 554
Einzelpreis: $0.65
Verpackung: Bulk
MinMultiplikator: 554
Verpackung: Bulk
MinMultiplikator: 554
Stellvertreter
-