Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IXFX120N30T
BESCHREIBUNG
MOSFET N-CH 300V 120A PLUS247-3
DETAILIERTE BESCHREIBUNG
N-Channel 300 V 120A (Tc) 960W (Tc) Through Hole PLUS247™-3
HERSTELLER
IXYS
STANDARD LEADTIME
45 Weeks
EDACAD-MODELL
IXFX120N30T Models
STANDARDPAKET
30

Technische Daten

Mfr
IXYS
Series
HiPerFET™, Trench
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
300 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs
265 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
20000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
960W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PLUS247™-3
Package / Case
TO-247-3 Variant
Base Product Number
IXFX120

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXFX120N30T

Dokumente und Medien

Datasheets
1(IXF(K,X)120N30T)
Environmental Information
1(Ixys IC REACH)
Featured Product
1(GigaMOS™ Power MOSFETs)
HTML Datasheet
1(IXF(K,X)120N30T)
EDA Models
1(IXFX120N30T Models)

Menge Preis

QUANTITÄT: 300
Einzelpreis: $10.67547
Verpackung: Tube
MinMultiplikator: 300

Stellvertreter

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Hersteller. : Infineon Technologies
Verfügbare Menge. : 471
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Verfügbare Menge. : 1,864
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Ersatztyp. : Similar