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ChinaIRF8513PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF8513PBF
BESCHREIBUNG
MOSFET 2N-CH 30V 8A/11A 8SO
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 8A, 11A 1.5W, 2.4W Surface Mount 8-SO
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
95
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tube
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
8A, 11A
Rds On (Max) @ Id, Vgs
15.5mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
8.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
766pF @ 15V
Power - Max
1.5W, 2.4W
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
IRF8513
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Infineon Technologies IRF8513PBF
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Menge Preis
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