Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
TK49N65W,S1F
BESCHREIBUNG
PB-F POWER MOSFET TRANSISTOR TO2
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 49.2A (Ta) 400W (Tc) Through Hole TO-247
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
24 Weeks
EDACAD-MODELL
TK49N65W,S1F Models
STANDARDPAKET
30

Technische Daten

Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
49.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
55mOhm @ 24.6A, 10V
Vgs(th) (Max) @ Id
3.5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
160 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
6500 pF @ 300 V
FET Feature
-
Power Dissipation (Max)
400W (Tc)
Operating Temperature
150°C
Mounting Type
Through Hole
Supplier Device Package
TO-247
Package / Case
TO-247-3
Base Product Number
TK49N65

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

264-TK49N65WS1F
TK49N65W,S1F(S

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Toshiba Semiconductor and Storage TK49N65W,S1F

Dokumente und Medien

Datasheets
1(TK49N65W)
Featured Product
1(Server Solutions)
EDA Models
1(TK49N65W,S1F Models)

Menge Preis

QUANTITÄT: 1020
Einzelpreis: $6.76889
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 510
Einzelpreis: $7.37961
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 120
Einzelpreis: $8.143
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 30
Einzelpreis: $8.652
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $10.69
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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