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ChinaBSP129E6327
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSP129E6327
BESCHREIBUNG
MOSFET N-CH 240V 350MA SOT223-4
DETAILIERTE BESCHREIBUNG
N-Channel 240 V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
240 V
Current - Continuous Drain (Id) @ 25°C
350mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
0V, 10V
Rds On (Max) @ Id, Vgs
6Ohm @ 350mA, 10V
Vgs(th) (Max) @ Id
1V @ 108µA
Gate Charge (Qg) (Max) @ Vgs
5.7 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
108 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4
Package / Case
TO-261-4, TO-261AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP000011102
BSP129INCT
BSP129INTR
BSP129
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSP129E6327
Dokumente und Medien
Datasheets
1(BSP129)
Other Related Documents
1(Part Number Guide)
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1(Data Processing Systems)
HTML Datasheet
1(BSP129)
Menge Preis
-
Stellvertreter
Teil Nr. : BSP129H6327XTSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $0.83000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 0
Einzelpreis. : $0.83000
Ersatztyp. : Parametric Equivalent
Teil Nr. : STN1NK80Z
Hersteller. : STMicroelectronics
Verfügbare Menge. : 899
Einzelpreis. : $1.21000
Ersatztyp. : Similar
Verfügbare Menge. : 899
Einzelpreis. : $1.21000
Ersatztyp. : Similar