Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
Drain to Source Voltage (Vdss)
55V
Current - Continuous Drain (Id) @ 25°C
2.6A
Rds On (Max) @ Id, Vgs
130mOhm @ 3A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
218.7pF @ 25V
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SO
Base Product Number
HTMN5130