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ChinaDMJ70H1D3SH3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
DMJ70H1D3SH3
BESCHREIBUNG
MOSFET N-CH 700V 4.6A TO251
DETAILIERTE BESCHREIBUNG
N-Channel 700 V 4.6A (Tc) 41W (Tc) Through Hole TO-251 (Type TH3)
HERSTELLER
Diodes Incorporated
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
Diodes Incorporated
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
700 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13.9 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
351 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
41W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251 (Type TH3)
Package / Case
TO-251-3 Stub Leads, IPAK
Base Product Number
DMJ70
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Affected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
DMJ70H1D3SH3-ND
DMJ70H1D3SH3DI
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Diodes Incorporated DMJ70H1D3SH3
Dokumente und Medien
Datasheets
1(DMJ70H1D3SH3)
Environmental Information
1(Diodes Environmental Compliance Cert)
PCN Obsolescence/ EOL
1(Mult Devices EOL 05/Feb/2019)
Menge Preis
-
Stellvertreter
Teil Nr. : IPS80R600P7AKMA1
Hersteller. : Rochester Electronics, LLC
Verfügbare Menge. : 2,980
Einzelpreis. : $0.76000
Ersatztyp. : Direct
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Ersatztyp. : Direct
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Hersteller. : Infineon Technologies
Verfügbare Menge. : 0
Einzelpreis. : $0.60000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.60000
Ersatztyp. : Similar