Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
STW200NF03
BESCHREIBUNG
MOSFET N-CH 30V 120A TO247-3
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 120A (Tc) 350W (Tc) Through Hole TO-247-3
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
STMicroelectronics
Series
STripFET™ II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.8mOhm @ 60A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
280 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
10000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-3
Package / Case
TO-247-3
Base Product Number
STW200

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STW200NF03

Dokumente und Medien

Datasheets
1(STW200NF03)
HTML Datasheet
1(STW200NF03)

Menge Preis

-

Stellvertreter

Teil Nr. : IRFP3703PBF
Hersteller. : Infineon Technologies
Verfügbare Menge. : 2,844
Einzelpreis. : $4.62000
Ersatztyp. : Similar