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ChinaIRLU3802PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRLU3802PBF
BESCHREIBUNG
MOSFET N-CH 12V 84A I-PAK
DETAILIERTE BESCHREIBUNG
N-Channel 12 V 84A (Tc) 88W (Tc) Through Hole I-PAK
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
84A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.8V, 4.5V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id
1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
41 nC @ 5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
2490 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
88W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-PAK
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
*IRLU3802PBF
SP001559000
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLU3802PBF
Dokumente und Medien
Datasheets
1(IRLR3802PbF, IRLU3802PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Design Resources
1(IRLR3802PBF Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Package Drawing Update 19/Aug/2015)
HTML Datasheet
1(IRLR3802PbF, IRLU3802PbF)
Menge Preis
-
Stellvertreter
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