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ChinaAOT3N60
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
AOT3N60
BESCHREIBUNG
MOSFET N-CH 600V 2.5A TO220
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 2.5A (Tc) 83W (Tc) Through Hole TO-220
HERSTELLER
Alpha & Omega Semiconductor Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Alpha & Omega Semiconductor Inc.
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
3.5Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
370 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
AOT3
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Alpha & Omega Semiconductor Inc. AOT3N60
Dokumente und Medien
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1(AOS Green Policy)
Environmental Information
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HTML Datasheet
1(TO220 Pkg Drawing)
Product Drawings
1(TO220 Pkg Drawing)
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