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ChinaIRFD320
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFD320
BESCHREIBUNG
MOSFET N-CH 400V 490MA 4HVMDIP
DETAILIERTE BESCHREIBUNG
N-Channel 400 V 490mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
155
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
400 V
Current - Continuous Drain (Id) @ 25°C
490mA (Ta)
Rds On (Max) @ Id, Vgs
1.8Ohm @ 210mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
410 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-HVMDIP
Package / Case
4-DIP (0.300", 7.62mm)
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
2156-IRFD320
HARHARIRFD320
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation IRFD320
Dokumente und Medien
Datasheets
1(IRFD320)
Menge Preis
QUANTITÄT: 155
Einzelpreis: $1.94
Verpackung: Bulk
MinMultiplikator: 155
Verpackung: Bulk
MinMultiplikator: 155
Stellvertreter
-