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ChinaFDS6680
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDS6680
BESCHREIBUNG
MOSFET N-CH 30V 11.5A 8SOIC
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 11.5A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
314
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2070 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFDS6680
2156-FDS6680
2156-FDS6680-FSTR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDS6680
Dokumente und Medien
Datasheets
1(FDS6680)
Menge Preis
QUANTITÄT: 314
Einzelpreis: $0.96
Verpackung: Bulk
MinMultiplikator: 314
Verpackung: Bulk
MinMultiplikator: 314
Stellvertreter
-