Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
2A
Rds On (Max) @ Id, Vgs
225mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs
10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
490pF @ 10V
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
FW389