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ChinaIXYQ40N65C3D1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXYQ40N65C3D1
BESCHREIBUNG
IGBT
DETAILIERTE BESCHREIBUNG
IGBT 650 V 80 A 300 W Through Hole TO-3P
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
XPT™, GenX3™
Package
Tube
Product Status
Active
IGBT Type
-
Voltage - Collector Emitter Breakdown (Max)
650 V
Current - Collector (Ic) (Max)
80 A
Current - Collector Pulsed (Icm)
180 A
Vce(on) (Max) @ Vge, Ic
2.35V @ 15V, 40A
Power - Max
300 W
Switching Energy
830µJ (on), 650µJ (off)
Input Type
Standard
Gate Charge
66 nC
Td (on/off) @ 25°C
23ns/110ns
Test Condition
400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr)
40 ns
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Supplier Device Package
TO-3P
Base Product Number
IXYQ40
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/IXYS IXYQ40N65C3D1
Dokumente und Medien
Datasheets
1(IXY(H,Q)40N65C3D1)
Environmental Information
1(Ixys IC REACH)
PCN Design/Specification
1(Multiple Devices Material 23/Jun/2020)
HTML Datasheet
1(IXY(H,Q)40N65C3D1)
Menge Preis
-
Stellvertreter
-