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ChinaFDI047AN08A0
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDI047AN08A0
BESCHREIBUNG
MOSFET N-CH 75V 80A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 75 V 80A (Tc) 310W (Tc) Through Hole TO-262 (I2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
112
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
PowerTrench®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
6V, 10V
Rds On (Max) @ Id, Vgs
4.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
138 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6600 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
310W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262 (I2PAK)
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FDI047AN08A0-FS
FAIFSCFDI047AN08A0
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FDI047AN08A0
Dokumente und Medien
Datasheets
1(FDI047AN08A0)
Menge Preis
QUANTITÄT: 112
Einzelpreis: $2.69
Verpackung: Tube
MinMultiplikator: 112
Verpackung: Tube
MinMultiplikator: 112
Stellvertreter
-