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ChinaIRLHM620TR2PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRLHM620TR2PBF
BESCHREIBUNG
MOSFET N-CH 20V 26A PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 26A (Ta), 40A (Tc) Surface Mount PQFN (3x3)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
26A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs
2.5mOhm @ 20A, 4.5V
Vgs(th) (Max) @ Id
1.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
78 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
3620 pF @ 10 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
PQFN (3x3)
Package / Case
8-VQFN Exposed Pad
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRLHM620TR2PBFCT
SP001558170
IRLHM620TR2PBFDKR
IRLHM620TR2PBFTR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLHM620TR2PBF
Dokumente und Medien
Datasheets
1(IRLHM620PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRLHM620TR2PBF Saber Model)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRLHM620PbF)
Simulation Models
1(IRLHM620TR2PBF Spice Model)
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