English
Spain
Rusia
Italy
China2SC4134S-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC4134S-E
BESCHREIBUNG
TRANS NPN 100V 1A TP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 100 V 1 A 120MHz 800 mW Through Hole TP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
2SC4134S-E Models
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
400mV @ 40mA, 400mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 100mA, 5V
Power - Max
800 mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPAK, TO-251AA
Supplier Device Package
TP
Base Product Number
2SC4134
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-2SC4134S-E-ON
ONSONS2SC4134S-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC4134S-E
Dokumente und Medien
Datasheets
1(2SC4134)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 31/Jan/2019)
HTML Datasheet
1(2SC4134)
EDA Models
1(2SC4134S-E Models)
Menge Preis
-
Stellvertreter
Teil Nr. : TTC004B,Q
Hersteller. : Toshiba Semiconductor and Storage
Verfügbare Menge. : 0
Einzelpreis. : $0.52000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.52000
Ersatztyp. : Similar