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ChinaIRLMS6702TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRLMS6702TRPBF
BESCHREIBUNG
MOSFET P-CH 20V 2.4A MICRO6
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 2.4A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
2.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.7V, 4.5V
Rds On (Max) @ Id, Vgs
200mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id
700mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
8.8 nC @ 4.5 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
210 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.7W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
Micro6™(TSOP-6)
Package / Case
SOT-23-6
Base Product Number
IRLMS6702
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001578880
*IRLMS6702TRPBF
IRLMS6702PBFTR
IRLMS6702PBFCT
IRLMS6702PBFDKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLMS6702TRPBF
Dokumente und Medien
Datasheets
1(IRLMS6702PbF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
()
Design Resources
1(IRLMS6702TR Saber Model)
Featured Product
1(Data Processing Systems)
PCN Packaging
1(Barcode Label Update 24/Feb/2017)
HTML Datasheet
1(IRLMS6702PbF)
Simulation Models
1(IRLMS6702TR Spice Model)
Menge Preis
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