English
Spain
Rusia
Italy
ChinaIRF6609
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6609
BESCHREIBUNG
MOSFET N-CH 20V 31A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 31A (Ta), 150A (Tc) 1.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
4,800
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
31A (Ta), 150A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
2mOhm @ 31A, 10V
Vgs(th) (Max) @ Id
2.45V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
69 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
6290 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MT
Package / Case
DirectFET™ Isometric MT
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF6609DKR
*IRF6609
SP001523768
IRF6609TR
IRF6609CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6609
Dokumente und Medien
Datasheets
1(IRF6609)
Other Related Documents
()
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRF6609)
Product Drawings
1(IR Hexfet Circuit)
Menge Preis
-
Stellvertreter
-