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ChinaFCP650N80Z
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FCP650N80Z
BESCHREIBUNG
MOSFET N-CH 800V 10A TO220
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 10A (Tc) 162W (Tc) Through Hole TO-220
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FCP650N80Z Models
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
onsemi
Series
SuperFET® II
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
650mOhm @ 4A, 10V
Vgs(th) (Max) @ Id
4.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1565 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
162W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220
Package / Case
TO-220-3
Base Product Number
FCP650
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FCP650N80Z
Dokumente und Medien
Datasheets
1(FCP650N80Z Datasheet)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Sep/2022)
PCN Design/Specification
1(Logo 17/Aug/2017)
PCN Assembly/Origin
1(Mat 9-29-22)
PCN Packaging
1(Mult Devices 24/Oct/2017)
EDA Models
1(FCP650N80Z Models)
Menge Preis
-
Stellvertreter
Teil Nr. : FCP400N80Z
Hersteller. : onsemi
Verfügbare Menge. : 850
Einzelpreis. : $3.48000
Ersatztyp. : MFR Recommended
Verfügbare Menge. : 850
Einzelpreis. : $3.48000
Ersatztyp. : MFR Recommended
Teil Nr. : IXTP10N60P
Hersteller. : IXYS
Verfügbare Menge. : 0
Einzelpreis. : $2.45410
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $2.45410
Ersatztyp. : Similar