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ChinaHUF75545P3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HUF75545P3
BESCHREIBUNG
N-CHANNEL ULTRAFET POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 75A (Tc) 270W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
211
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
10mOhm @ 75A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
235 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3750 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
270W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
FAIFSCHUF75545P3
2156-HUF75545P3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF75545P3
Dokumente und Medien
Datasheets
1(HUF75545S3ST Datasheet)
Menge Preis
QUANTITÄT: 211
Einzelpreis: $1.42
Verpackung: Bulk
MinMultiplikator: 211
Verpackung: Bulk
MinMultiplikator: 211
Stellvertreter
-