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ChinaW987D2HBJX7E
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TEILNUMMER DES HERSTELLERS
W987D2HBJX7E
BESCHREIBUNG
IC DRAM 128MBIT PAR 90VFBGA
DETAILIERTE BESCHREIBUNG
SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 133 MHz 5.4 ns 90-VFBGA (8x13)
HERSTELLER
Winbond Electronics
STANDARD LEADTIME
EDACAD-MODELL
W987D2HBJX7E Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Winbond Electronics
Series
-
Package
Tray
Product Status
Obsolete
allaboutcomponents.com Programmable
Not Verified
Memory Type
Volatile
Memory Format
DRAM
Technology
SDRAM - Mobile LPSDR
Memory Size
128Mbit
Memory Organization
4M x 32
Memory Interface
Parallel
Clock Frequency
133 MHz
Write Cycle Time - Word, Page
15ns
Access Time
5.4 ns
Voltage - Supply
1.7V ~ 1.95V
Operating Temperature
-25°C ~ 85°C (TC)
Mounting Type
Surface Mount
Package / Case
90-TFBGA
Supplier Device Package
90-VFBGA (8x13)
Base Product Number
W987D2
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8542.32.0002
Andere Namen
-
Kategorie
/Product Index/Integrated Circuits (ICs)/Memory/Memory/Winbond Electronics W987D2HBJX7E
Dokumente und Medien
Datasheets
1(W987D6HB/2HB)
Environmental Information
1(Winbond Electronics RoHS Cert)
PCN Obsolescence/ EOL
1(DRAM 30-Apr-2022)
PCN Design/Specification
1(Die Attach Film Update 3/Jan/2017)
EDA Models
1(W987D2HBJX7E Models)
Menge Preis
QUANTITÄT: 240
Einzelpreis: $2.76954
Verpackung: Tray
MinMultiplikator: 240
Verpackung: Tray
MinMultiplikator: 240
Stellvertreter
-