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ChinaFCP170N60
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FCP170N60
BESCHREIBUNG
MOSFET N-CH 600V 22A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 22A (Tc) 227W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
FCP170N60 Models
STANDARDPAKET
85
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
SuperFET® II
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
55 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2860 pF @ 380 V
FET Feature
-
Power Dissipation (Max)
227W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8542.39.0001
Andere Namen
2156-FCP170N60
FAIFSCFCP170N60
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FCP170N60
Dokumente und Medien
Datasheets
1(FCP170N60 Datasheet)
EDA Models
1(FCP170N60 Models)
Menge Preis
QUANTITÄT: 85
Einzelpreis: $3.56
Verpackung: Bulk
MinMultiplikator: 85
Verpackung: Bulk
MinMultiplikator: 85
Stellvertreter
-