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ChinaUPA2810T1L-E1-AY
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
UPA2810T1L-E1-AY
BESCHREIBUNG
MOSFET P-CH 30V 13A 8DFN
DETAILIERTE BESCHREIBUNG
P-Channel 30 V 13A (Ta) 1.5W (Ta) Surface Mount 8-DFN3333 (3.3x3.3)
HERSTELLER
Renesas Electronics Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
275
Lagerbestände
Technische Daten
Mfr
Renesas Electronics Corporation
Series
-
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
13A (Ta)
Rds On (Max) @ Id, Vgs
12mOhm @ 13A, 10V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
1860 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
1.5W (Ta)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-DFN3333 (3.3x3.3)
Package / Case
8-VDFN Exposed Pad
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
RENRNSUPA2810T1L-E1-AY
2156-UPA2810T1L-E1-AY-RETR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Renesas Electronics Corporation UPA2810T1L-E1-AY
Dokumente und Medien
Datasheets
1(UPA2810T1L-E1-AY)
Menge Preis
QUANTITÄT: 275
Einzelpreis: $1.09
Verpackung: Bulk
MinMultiplikator: 275
Verpackung: Bulk
MinMultiplikator: 275
Stellvertreter
-