Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
IPI80N04S404AKSA1
BESCHREIBUNG
MOSFET N-CH 40V 80A TO262-3
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 80A (Tc) 71W (Tc) Through Hole PG-TO262-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500

Technische Daten

Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tube
Product Status
Last Time Buy
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id
4V @ 35µA
Gate Charge (Qg) (Max) @ Vgs
43 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
3440 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
71W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO262-3
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
IPI80N04

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

IPI80N04S4-04
INFINFIPI80N04S404AKSA1
IPI80N04S4-04-ND
SP000646190
2156-IPI80N04S404AKSA1

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPI80N04S404AKSA1

Dokumente und Medien

Datasheets
1(IPx80N04S4-04)
Other Related Documents
1(Part Number Guide)
Environmental Information
1(RoHS Certificate)
Featured Product
1(Data Processing Systems)
PCN Assembly/Origin
1(Mult Dev Wafer Fab 12/Feb/2019)
HTML Datasheet
1(IPx80N04S4-04)

Menge Preis

QUANTITÄT: 500
Einzelpreis: $1.2987
Verpackung: Tube
MinMultiplikator: 500

Stellvertreter

Teil Nr. : IPI80N04S403AKSA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 498
Einzelpreis. : $3.92000
Ersatztyp. : MFR Recommended