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ChinaIXTQ120N15T
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IXTQ120N15T
BESCHREIBUNG
MOSFET N-CH 150V 120A TO3P
DETAILIERTE BESCHREIBUNG
N-Channel 150 V 120A (Tc) Through Hole TO-3P
HERSTELLER
IXYS
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
Trench
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
16mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
4900 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Base Product Number
IXTQ120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/IXYS IXTQ120N15T
Dokumente und Medien
Environmental Information
1(Ixys IC REACH)
Menge Preis
-
Stellvertreter
-