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ChinaRF1S9630SM
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RF1S9630SM
BESCHREIBUNG
P-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 200 V 6.5A Surface Mount TO-263AB
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
287
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
6.5A
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
TO-263AB
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARRF1S9630SM
2156-RF1S9630SM
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RF1S9630SM
Dokumente und Medien
Datasheets
1(RFD3055LESM9A)
Menge Preis
QUANTITÄT: 286
Einzelpreis: $1.05
Verpackung: Bulk
MinMultiplikator: 286
Verpackung: Bulk
MinMultiplikator: 286
Stellvertreter
-