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China2SC3651-OTE-TD-E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SC3651-OTE-TD-E
BESCHREIBUNG
BIP NPN 0.2A 100V
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 100 V 200 mA 150MHz 500 mW Surface Mount PCP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,902
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
200 mA
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 2mA, 100mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
500 @ 10mA, 5V
Power - Max
500 mW
Frequency - Transition
150MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
TO-243AA
Supplier Device Package
PCP
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
2156-2SC3651-OTE-TD-E
ONSONS2SC3651-OTE-TD-E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SC3651-OTE-TD-E
Dokumente und Medien
Datasheets
1(2SC3651-TD-E Datasheet)
Menge Preis
QUANTITÄT: 1902
Einzelpreis: $0.16
Verpackung: Bulk
MinMultiplikator: 1902
Verpackung: Bulk
MinMultiplikator: 1902
Stellvertreter
-