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ChinaIRLBA3803P
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRLBA3803P
BESCHREIBUNG
MOSFET N-CH 30V 179A SUPER-220
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 179A (Tc) 270W (Tc) Through Hole SUPER-220™ (TO-273AA)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
179A (Tc)
Rds On (Max) @ Id, Vgs
5mOhm @ 71A, 10V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
140 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds
5000 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
270W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
SUPER-220™ (TO-273AA)
Package / Case
TO-273AA
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRLBA3803P
Dokumente und Medien
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Design Resources
1(IRLBA3803P Saber Model)
Featured Product
1(Data Processing Systems)
Menge Preis
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Stellvertreter
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