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ChinaBSC085N025S G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSC085N025S G
BESCHREIBUNG
MOSFET N-CH 25V 14A/35A TDSON
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 14A (Ta), 35A (Tc) 2.8W (Ta), 52W (Tc) Surface Mount PG-TDSON-8-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
5,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
OptiMOS™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
14A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
8.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id
2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
14 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1800 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 52W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TDSON-8-1
Package / Case
8-PowerTDFN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BSC085N025SG
BSC085N025S G-ND
SP000095469
BSC085N025SGXT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSC085N025S G
Dokumente und Medien
Datasheets
1(BSC085N025S G)
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1(Part Number Guide)
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1(BSC085N025S G)
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