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ChinaSTB14NM65N
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STB14NM65N
BESCHREIBUNG
MOSFET N-CH 650V 12A D2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 12A (Tc) 125W (Tc) Surface Mount D2PAK
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
MDmesh™ II
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
45 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
125W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
STB14N
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
1805-STB14NM65NTR
-497-7000-6
1805-STB14NM65NCT
1805-STB14NM65NDKR
497-7000-6
-497-7000-1
497-7000-1
497-7000-2
-497-7000-2
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STB14NM65N
Dokumente und Medien
Datasheets
1(STx14NM65N)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
HTML Datasheet
1(STx14NM65N)
Menge Preis
-
Stellvertreter
Teil Nr. : STB21N65M5
Hersteller. : STMicroelectronics
Verfügbare Menge. : 2,748
Einzelpreis. : $5.06000
Ersatztyp. : Direct
Verfügbare Menge. : 2,748
Einzelpreis. : $5.06000
Ersatztyp. : Direct