English
Spain
Rusia
Italy
ChinaSI5499DC-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI5499DC-T1-GE3
BESCHREIBUNG
MOSFET P-CH 8V 6A 1206-8 CHIPFET
DETAILIERTE BESCHREIBUNG
P-Channel 8 V 6A (Tc) 2.5W (Ta), 6.2W (Tc) Surface Mount 1206-8 ChipFET™
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
8 V
Current - Continuous Drain (Id) @ 25°C
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Rds On (Max) @ Id, Vgs
36mOhm @ 5.1A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 8 V
Vgs (Max)
±5V
Input Capacitance (Ciss) (Max) @ Vds
1290 pF @ 4 V
FET Feature
-
Power Dissipation (Max)
2.5W (Ta), 6.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
1206-8 ChipFET™
Package / Case
8-SMD, Flat Lead
Base Product Number
SI5499
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI5499DC-T1-GE3TR
SI5499DC-T1-GE3CT
SI5499DC-T1-GE3DKR
SI5499DCT1GE3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI5499DC-T1-GE3
Dokumente und Medien
Datasheets
1(SI5499DC)
Environmental Information
()
HTML Datasheet
1(SI5499DC)
Menge Preis
-
Stellvertreter
Teil Nr. : SI5471DC-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 16,100
Einzelpreis. : $0.72000
Ersatztyp. : Similar
Verfügbare Menge. : 16,100
Einzelpreis. : $0.72000
Ersatztyp. : Similar