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ChinaFDN5618P_G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDN5618P_G
BESCHREIBUNG
MOSFET P-CH 60V 1.25A SUPERSOT3
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 1.25A (Ta) 500mW (Ta) Surface Mount SOT-23-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
FDN5618P_G Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
PowerTrench®
Package
Bulk
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
1.25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
170mOhm @ 1.25A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13.8 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
FDN561
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi FDN5618P_G
Dokumente und Medien
Video File
1(Brushless DC Motor Control | Datasheet Preview)
Environmental Information
1(onsemi RoHS)
Featured Product
1(ON Semiconductor - 30 V to 60 V Trench6 N-Channel MOSFET)
PCN Obsolescence/ EOL
1(Mult Devices 17/Apr/2017)
EDA Models
1(FDN5618P_G Models)
Menge Preis
-
Stellvertreter
Teil Nr. : NVR5124PLT1G
Hersteller. : onsemi
Verfügbare Menge. : 11,089
Einzelpreis. : $0.45000
Ersatztyp. : Similar
Verfügbare Menge. : 11,089
Einzelpreis. : $0.45000
Ersatztyp. : Similar