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ChinaFDS8333C
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FDS8333C
BESCHREIBUNG
MOSFET N/P-CH 30V 4.1A 8SOIC
DETAILIERTE BESCHREIBUNG
Mosfet Array 30V 4.1A, 3.4A 900mW Surface Mount 8-SOIC
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
PowerTrench®
Package
Tape & Reel (TR)
Product Status
Obsolete
Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
4.1A, 3.4A
Rds On (Max) @ Id, Vgs
80mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
282pF @ 10V
Power - Max
900mW
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Supplier Device Package
8-SOIC
Base Product Number
FDS83
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
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Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/onsemi FDS8333C
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