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ChinaRN2112ACT(TPL3)
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RN2112ACT(TPL3)
BESCHREIBUNG
TRANS PREBIAS PNP 50V 0.08A CST3
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 80 mA 100 mW Surface Mount CST3
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
80 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Power - Max
100 mW
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
CST3
Base Product Number
RN2112
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
RN2112ACT(TPL3)TR
RN2112ACT(TPL3)CT
RN2112ACT(TPL3)DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN2112ACT(TPL3)
Dokumente und Medien
-
Menge Preis
QUANTITÄT: 10000
Einzelpreis: $0.05166
Verpackung: Tape & Reel (TR)
MinMultiplikator: 10000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 10000
Stellvertreter
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