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ChinaTSM061NA03CR RLG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
TSM061NA03CR RLG
BESCHREIBUNG
MOSFET N-CH 30V 88A 8PDFN
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 88A (Tc) 78W (Tc) Surface Mount 8-PDFN (5x6)
HERSTELLER
Taiwan Semiconductor Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Taiwan Semiconductor Corporation
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
88A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
6.1mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
19 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1133 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (5x6)
Package / Case
8-PowerTDFN
Base Product Number
TSM061
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
TSM061NA03CR RLGDKR-ND
TSM061NA03CRRLGTR
TSM061NA03CR RLGDKR
TSM061NA03CRRLGDKR
TSM061NA03CR RLGTR
TSM061NA03CRRLGCT
TSM061NA03CR RLGCT-ND
TSM061NA03CR RLGCT
TSM061NA03CR RLGTR-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Taiwan Semiconductor Corporation TSM061NA03CR RLG
Dokumente und Medien
Datasheets
1(TSM061NA03CR)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev 17/Sep/2021)
HTML Datasheet
1(TSM061NA03CR)
Menge Preis
-
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