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ChinaSIA425EDJ-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SIA425EDJ-T1-GE3
BESCHREIBUNG
MOSFET P-CH 20V 4.5A PPAK SC70-6
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 4.5A (Tc) 2.9W (Ta), 15.6W (Tc) Surface Mount PowerPAK® SC-70-6
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
60mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Vgs (Max)
±12V
FET Feature
-
Power Dissipation (Max)
2.9W (Ta), 15.6W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6
Package / Case
PowerPAK® SC-70-6
Base Product Number
SIA425
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIA425EDJ-T1-GE3TR
SIA425EDJT1GE3
SIA425EDJ-T1-GE3CT
SIA425EDJ-T1-GE3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIA425EDJ-T1-GE3
Dokumente und Medien
Datasheets
1(SIA425EDJ)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
HTML Datasheet
1(SIA425EDJ)
Menge Preis
-
Stellvertreter
Teil Nr. : SIA459EDJ-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 3
Einzelpreis. : $0.48000
Ersatztyp. : Similar
Verfügbare Menge. : 3
Einzelpreis. : $0.48000
Ersatztyp. : Similar