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ChinaLSIC1MO120G0080
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
LSIC1MO120G0080
BESCHREIBUNG
MOSFET SIC 1200V 25A TO247-4L
DETAILIERTE BESCHREIBUNG
N-Channel 1200 V 39A (Tc) 214W (Tc) Through Hole TO-247-4L
HERSTELLER
Littelfuse Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
30
Lagerbestände
Technische Daten
Mfr
Littelfuse Inc.
Series
-
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
92 nC @ 20 V
Vgs (Max)
+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds
170 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
214W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
Base Product Number
LSIC1MO120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
18-LSIC1MO120G0080
-1024-LSIC1MO120G0080
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Littelfuse Inc. LSIC1MO120G0080
Dokumente und Medien
Datasheets
1(LSIC1MO120G0080 Datasheet)
Menge Preis
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Stellvertreter
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