English
Spain
Rusia
Italy
ChinaIRF6811STRPBF-INF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6811STRPBF-INF
BESCHREIBUNG
DIRECTFET PLUS POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 19A (Ta), 74A (Tc) 2.1W (Ta), 32W (Tc) Surface Mount DirectFET™ Isometric SQ
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
430
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
DirectFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
19A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs
3.7mOhm @ 19A, 10V
Vgs(th) (Max) @ Id
2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs
17 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
1590 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 32W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DirectFET™ Isometric SQ
Package / Case
DirectFET™ Isometric SQ
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
0000.00.0000
Andere Namen
IFEINFIRF6811STRPBF
2156-IRF6811STRPBF-INF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6811STRPBF-INF
Dokumente und Medien
Datasheets
1(IRF6811STRPBF)
Menge Preis
QUANTITÄT: 430
Einzelpreis: $0.7
Verpackung: Bulk
MinMultiplikator: 430
Verpackung: Bulk
MinMultiplikator: 430
Stellvertreter
-