Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
1.4Ohm @ 2A, 20V
Vgs(th) (Max) @ Id
4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
200 pF @ 1000 V
Power Dissipation (Max)
78W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
D2PAK (7-Lead)
Package / Case
TO-263-7 (Straight Leads)
Base Product Number
C2M1000170