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ChinaPHU108NQ03LT,127
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PHU108NQ03LT,127
BESCHREIBUNG
MOSFET N-CH 25V 75A IPAK
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 75A (Tc) 187W (Tc) Through Hole I-Pak
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
75
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V, 10V
Rds On (Max) @ Id, Vgs
6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
16.3 nC @ 4.5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1375 pF @ 12 V
FET Feature
-
Power Dissipation (Max)
187W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
I-Pak
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number
PHU10
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
934058325127
PHU108NQ03LT
PHU108NQ03LT-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PHU108NQ03LT,127
Dokumente und Medien
Datasheets
1(PHB,PHD,PHU108NQ03LT)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(PHB,PHD,PHU108NQ03LT)
Menge Preis
-
Stellvertreter
-