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ChinaNTMFS5832NLT1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTMFS5832NLT1G
BESCHREIBUNG
MOSFET N-CH 40V 20A/111A 5DFN
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 20A (Ta), 111A (Tc) 3.1W (Ta), 96W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta), 111A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
4.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
51 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
3.1W (Ta), 96W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
5-DFN (5x6) (8-SOFL)
Package / Case
8-PowerTDFN, 5 Leads
Base Product Number
NTMFS5832
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
NTMFS5832NLT1G-ND
NTMFS5832NLT1GOSDKR
2156-NTMFS5832NLT1G-OS
ONSONSNTMFS5832NLT1G
NTMFS5832NLT1GOSTR
NTMFS5832NLT1GOSCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMFS5832NLT1G
Dokumente und Medien
Datasheets
1(NTMFS5832NL)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Mar/2022)
PCN Assembly/Origin
1(Wafer Fab Capacity 27/Jul/2020)
HTML Datasheet
1(NTMFS5832NL)
Menge Preis
-
Stellvertreter
-